Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy

We demonstrate, for the first time, crack-free AlGaN/GaN high-electron-mobility transistors (HEMT) on 100 mm Si(111) by ammonia molecular beam epitaxy. High growth rate accelerates rapid transition from three-dimensional (3D) to two-dimensional (2D) growth and reduces the defect density. With increa...

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Bibliographic Details
Main Authors: Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, M., Ravikiran, Lingaparthi, Arulkumaran, Subramaniam, Lee, Kenneth E., Ing, Ng Geok
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/99411
http://hdl.handle.net/10220/12599

Internet

https://hdl.handle.net/10356/99411
http://hdl.handle.net/10220/12599

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