Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing
In this article, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots(QDs) due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescencelinewidth of the ground stat...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/99690 http://hdl.handle.net/10220/18011 |