Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure

Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure

Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature l...

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Bibliographic Details
Main Authors: Tang, Xiaohong, Mei, Ting, Wang, Yixin, Djie, Hery Susanto, Chin, Mee Koy, Nie, Dong
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2010
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:https://hdl.handle.net/10356/99769
http://hdl.handle.net/10220/6419

Internet

https://hdl.handle.net/10356/99769
http://hdl.handle.net/10220/6419

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