Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure
Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature l...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2010
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| Online Access: | https://hdl.handle.net/10356/99769 http://hdl.handle.net/10220/6419 |
| _version_ | 1811696252452077568 |
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| author | Tang, Xiaohong Mei, Ting Wang, Yixin Djie, Hery Susanto Chin, Mee Koy Nie, Dong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tang, Xiaohong Mei, Ting Wang, Yixin Djie, Hery Susanto Chin, Mee Koy Nie, Dong |
| author_sort | Tang, Xiaohong |
| collection | NTU |
| description | Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature lower than 600 degrees celcius, and a maximum band gap redshift of 50 nm is obtained in experiment. Blueshift is obtained at 700 degrees celcius when the group V sublattice interdiffusion becomes appreciable. |
| first_indexed | 2024-10-01T07:36:25Z |
| format | Journal Article |
| id | ntu-10356/99769 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:36:25Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/997692020-03-07T14:00:31Z Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure Tang, Xiaohong Mei, Ting Wang, Yixin Djie, Hery Susanto Chin, Mee Koy Nie, Dong School of Electrical and Electronic Engineering A*STAR Institute for Infocomm Research DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature lower than 600 degrees celcius, and a maximum band gap redshift of 50 nm is obtained in experiment. Blueshift is obtained at 700 degrees celcius when the group V sublattice interdiffusion becomes appreciable. Published version 2010-09-07T04:47:18Z 2019-12-06T20:11:14Z 2010-09-07T04:47:18Z 2019-12-06T20:11:14Z 2006 2006 Journal Article Mei, T., Tang, X., Wang, Y., Djie, H. S., Chin, M. K., & Nie, D. (2006). Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure. Journal of applied physics, 100, 1-3. 0021-8979 https://hdl.handle.net/10356/99769 http://hdl.handle.net/10220/6419 10.1063/1.2227267 en Journal of applied physics Journal of Applied Physics © copyright 2006 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v100/i4/p046103_s1?isAuthorized=no 3 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Tang, Xiaohong Mei, Ting Wang, Yixin Djie, Hery Susanto Chin, Mee Koy Nie, Dong Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure |
| title | Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure |
| title_full | Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure |
| title_fullStr | Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure |
| title_full_unstemmed | Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure |
| title_short | Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure |
| title_sort | argon plasma exposure enhanced intermixing in an undoped ingaasp inp quantum well structure |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials |
| url | https://hdl.handle.net/10356/99769 http://hdl.handle.net/10220/6419 |
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