Illumination-enhanced hysteresis of transistors based on carbon nanotube networks
The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO2 on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si−SiO2 interface. We show that the hysteresis in SWNT transistors wi...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2011
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/99840 http://hdl.handle.net/10220/7420 |