Effects of Si(001) surface amorphization on ErSi2 thin film
In a materials study of ErSi2/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi2 thin film were investigated with varying degrees of Si(001) surface amorphization. The amorphization was carried out by in situ Ar plasma cleaning and Si pre-amorphizati...
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/99843 http://hdl.handle.net/10220/10497 |
| _version_ | 1826115996972220416 |
|---|---|
| author | Pey, Kin Leong Lee, Pooi See Tan, Eu Jin Kon, M. L. Zhang, Y. W. Wang, W. D. Chi, Dong Zhi |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Pey, Kin Leong Lee, Pooi See Tan, Eu Jin Kon, M. L. Zhang, Y. W. Wang, W. D. Chi, Dong Zhi |
| author_sort | Pey, Kin Leong |
| collection | NTU |
| description | In a materials study of ErSi2/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi2 thin film were investigated with varying degrees of Si(001) surface amorphization. The amorphization was carried out by in situ Ar plasma cleaning and Si pre-amorphization implant. It was found that the ErSi2 thin film becomes smoother but less textured and less epitaxial with Si(001) with increasing degree of the Si surface amorphization. In addition, an increased oxygen penetration during rapid thermal annealing occurs with increasing substrate amorphization. |
| first_indexed | 2024-10-01T04:04:13Z |
| format | Journal Article |
| id | ntu-10356/99843 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:04:13Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/998432020-06-01T10:01:54Z Effects of Si(001) surface amorphization on ErSi2 thin film Pey, Kin Leong Lee, Pooi See Tan, Eu Jin Kon, M. L. Zhang, Y. W. Wang, W. D. Chi, Dong Zhi School of Electrical and Electronic Engineering School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films In a materials study of ErSi2/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi2 thin film were investigated with varying degrees of Si(001) surface amorphization. The amorphization was carried out by in situ Ar plasma cleaning and Si pre-amorphization implant. It was found that the ErSi2 thin film becomes smoother but less textured and less epitaxial with Si(001) with increasing degree of the Si surface amorphization. In addition, an increased oxygen penetration during rapid thermal annealing occurs with increasing substrate amorphization. 2013-06-19T08:17:39Z 2019-12-06T20:12:15Z 2013-06-19T08:17:39Z 2019-12-06T20:12:15Z 2005 2005 Journal Article Tan, E. J., Kon, M. L., Pey, K. L., Lee, P. S., Zhang, Y. W., Wang, W. D., et al. (2006). Effects of Si(001) surface amorphization on ErSi2 thin film. Thin Solid Films, 504(1-2), 157-160. 0040-6090 https://hdl.handle.net/10356/99843 http://hdl.handle.net/10220/10497 10.1016/j.tsf.2005.09.067 en Thin solid films © 2005 Elsevier B.V. |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Pey, Kin Leong Lee, Pooi See Tan, Eu Jin Kon, M. L. Zhang, Y. W. Wang, W. D. Chi, Dong Zhi Effects of Si(001) surface amorphization on ErSi2 thin film |
| title | Effects of Si(001) surface amorphization on ErSi2 thin film |
| title_full | Effects of Si(001) surface amorphization on ErSi2 thin film |
| title_fullStr | Effects of Si(001) surface amorphization on ErSi2 thin film |
| title_full_unstemmed | Effects of Si(001) surface amorphization on ErSi2 thin film |
| title_short | Effects of Si(001) surface amorphization on ErSi2 thin film |
| title_sort | effects of si 001 surface amorphization on ersi2 thin film |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | https://hdl.handle.net/10356/99843 http://hdl.handle.net/10220/10497 |
| work_keys_str_mv | AT peykinleong effectsofsi001surfaceamorphizationonersi2thinfilm AT leepooisee effectsofsi001surfaceamorphizationonersi2thinfilm AT taneujin effectsofsi001surfaceamorphizationonersi2thinfilm AT konml effectsofsi001surfaceamorphizationonersi2thinfilm AT zhangyw effectsofsi001surfaceamorphizationonersi2thinfilm AT wangwd effectsofsi001surfaceamorphizationonersi2thinfilm AT chidongzhi effectsofsi001surfaceamorphizationonersi2thinfilm |