Modeling and layout optimization techniques for silicon-based symmetrical spiral inductors
A scalable and highly accurate RF symmetrical inductor model (with model error of less than 5%) has been developed from more than 100 test structures, enabling device performance versus layout size trade-offs and optimization up to 10 GHz. Large conductor width designs are found to yield good perfor...
| প্রধান লেখক: | , , , , |
|---|---|
| অন্যান্য লেখক: | |
| বিন্যাস: | Journal Article |
| ভাষা: | English |
| প্রকাশিত: |
2014
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | https://hdl.handle.net/10356/99907 http://hdl.handle.net/10220/18633 http://www.jpier.org/PIER/pier.php?paper=13082001 |