Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation

Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation

We report bonding and diffusion behavior of nitrogen incorporated into InSb wafer by two-step implantation. Three nitrogen-containing regions, i.e., a surface accumulation region, a uniform region, and a tail region, were observed in the samples after post annealing. X-ray photoelectron spectroscopy...

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Bibliographic Details
Main Authors: Wang, Youyi, Zhang, Dao Hua, Zhang, Sam, Wee, A. T. S., Ramam, A., Chen, X. Z., Jin, Y. J., Li, J. H., Liu, C. J.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Science::Chemistry::Analytical chemistry::Gas analysis
Online Access:https://hdl.handle.net/10356/99910
http://hdl.handle.net/10220/9340

Internet

https://hdl.handle.net/10356/99910
http://hdl.handle.net/10220/9340

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