White-light-induced disruption of nanoscale conducting filament in hafnia

Nanoscale conducting filament, which forms the basis of the HfO2 resistive memory, is shown to exhibit a “negative photoconductivity” behavior, in that, electrical conduction through it can be disrupted upon white-light illumination. This behavior should be contrasted against the positive photocondu...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखकों: Zhang, H. Z., Bersuker, G., Zhou, Y., Yew, Kwang Sing, Ang, Diing Shenp, Kawashima, Tomohito, Bera, Milan Kumar
अन्य लेखक: School of Electrical and Electronic Engineering
स्वरूप: Journal Article
भाषा:English
प्रकाशित: 2015
ऑनलाइन पहुंच:https://hdl.handle.net/10356/99990
http://hdl.handle.net/10220/38678