Neutron Radiation Genereted Charges Trapped In Mos Devices
ABSTRAK Metal oxide semiconductor (MOS) circuits are currently the cornerstones of the modern microelectronics industry. The primary physical effect of neutron bombarding semiconductor material is the formation of displacement defects within the crystal lattice structure. Neutron radiation causes fa...
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[Yogyakarta] : Universitas Gadjah Mada
2001
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