Microstructure and electrical properties of AZO films prepared by RF magnetron sputtering
AZO is an ideal replacement transparent conducting oxide (TCO) for ITO to all corresponding applications. The typical applications include: transparent electrodes for solar cells, flat panel displays, LCD electrodes, electro-magnetic compatibility (RF-EMI shielding) coatings, touch panel transparent...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Trans Tech Publications, Switzerland
2011
|
| Subjects: | |
| Online Access: | http://irep.iium.edu.my/2876/1/AMR_264-265_2011_Jufri.pdf |
| _version_ | 1796874938539311104 |
|---|---|
| author | Bakri, Jufriadi Sutjipto, Agus Geter Edy Othman, Raihan Muhida, Riza |
| author_facet | Bakri, Jufriadi Sutjipto, Agus Geter Edy Othman, Raihan Muhida, Riza |
| author_sort | Bakri, Jufriadi |
| collection | IIUM |
| description | AZO is an ideal replacement transparent conducting oxide (TCO) for ITO to all corresponding applications. The typical applications include: transparent electrodes for solar cells, flat panel displays, LCD electrodes, electro-magnetic compatibility (RF-EMI shielding) coatings, touch panel transparent contacts, static discharge dissipation. The production of useful and commercially attractive thin films using different deposition processes is very important parameter to investigate. A systematic study of the sputtering condition and their influenced on electrical and
structural were studied. In this work, AZO films were deposited by RF magnetron sputtering at 200 °C. The result shows that the deposited time has influenced the characteristic of deposited AZO films. For a longer deposition time, thin film shows a uniform grain growth. The resistivity found minimum at the deposition time of 45 minutes. It can be considered that by reducing of the grain
boundaries which enable the electron carries to conduct smoothly. |
| first_indexed | 2024-03-05T22:31:40Z |
| format | Article |
| id | oai:generic.eprints.org:2876 |
| institution | International Islamic University Malaysia |
| language | English |
| last_indexed | 2024-03-05T22:31:40Z |
| publishDate | 2011 |
| publisher | Trans Tech Publications, Switzerland |
| record_format | dspace |
| spelling | oai:generic.eprints.org:28762012-05-07T13:40:38Z http://irep.iium.edu.my/2876/ Microstructure and electrical properties of AZO films prepared by RF magnetron sputtering Bakri, Jufriadi Sutjipto, Agus Geter Edy Othman, Raihan Muhida, Riza TA401 Materials of engineering and construction TJ163.26 Energy conservation TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices AZO is an ideal replacement transparent conducting oxide (TCO) for ITO to all corresponding applications. The typical applications include: transparent electrodes for solar cells, flat panel displays, LCD electrodes, electro-magnetic compatibility (RF-EMI shielding) coatings, touch panel transparent contacts, static discharge dissipation. The production of useful and commercially attractive thin films using different deposition processes is very important parameter to investigate. A systematic study of the sputtering condition and their influenced on electrical and structural were studied. In this work, AZO films were deposited by RF magnetron sputtering at 200 °C. The result shows that the deposited time has influenced the characteristic of deposited AZO films. For a longer deposition time, thin film shows a uniform grain growth. The resistivity found minimum at the deposition time of 45 minutes. It can be considered that by reducing of the grain boundaries which enable the electron carries to conduct smoothly. Trans Tech Publications, Switzerland 2011-06-30 Article PeerReviewed application/pdf en cc_by_nc http://irep.iium.edu.my/2876/1/AMR_264-265_2011_Jufri.pdf Bakri, Jufriadi and Sutjipto, Agus Geter Edy and Othman, Raihan and Muhida, Riza (2011) Microstructure and electrical properties of AZO films prepared by RF magnetron sputtering. Advanced Materials Research, 264-65. pp. 754-759. ISSN 1662-8985 http://www.scientific.net/AMR.264-265.754 doi:10.4028/www.scientific.net/AMR.264-265.754 |
| spellingShingle | TA401 Materials of engineering and construction TJ163.26 Energy conservation TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Bakri, Jufriadi Sutjipto, Agus Geter Edy Othman, Raihan Muhida, Riza Microstructure and electrical properties of AZO films prepared by RF magnetron sputtering |
| title | Microstructure and electrical properties of AZO films
prepared by RF magnetron sputtering |
| title_full | Microstructure and electrical properties of AZO films
prepared by RF magnetron sputtering |
| title_fullStr | Microstructure and electrical properties of AZO films
prepared by RF magnetron sputtering |
| title_full_unstemmed | Microstructure and electrical properties of AZO films
prepared by RF magnetron sputtering |
| title_short | Microstructure and electrical properties of AZO films
prepared by RF magnetron sputtering |
| title_sort | microstructure and electrical properties of azo films prepared by rf magnetron sputtering |
| topic | TA401 Materials of engineering and construction TJ163.26 Energy conservation TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices |
| url | http://irep.iium.edu.my/2876/1/AMR_264-265_2011_Jufri.pdf |
| work_keys_str_mv | AT bakrijufriadi microstructureandelectricalpropertiesofazofilmspreparedbyrfmagnetronsputtering AT sutjiptoagusgeteredy microstructureandelectricalpropertiesofazofilmspreparedbyrfmagnetronsputtering AT othmanraihan microstructureandelectricalpropertiesofazofilmspreparedbyrfmagnetronsputtering AT muhidariza microstructureandelectricalpropertiesofazofilmspreparedbyrfmagnetronsputtering |