Electrical properties of neutron-irradiated silicon and GaAs commercial diodes
Neutron radiation testing was performed on silicon and GaAs diodes to investigate changes in the device parameters after neutron exposure. Californium-252 source was used to irradiate these diodes up to total dose of 1117.87mSv. The effects of nuclear radiation on the forward and reverse current-vol...
| Հիմնական հեղինակներ: | , , , |
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| Ձևաչափ: | Proceeding Paper |
| Լեզու: | English |
| Հրապարակվել է: |
2012
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| Խորագրեր: | |
| Առցանց հասանելիություն: | http://irep.iium.edu.my/29528/1/electrical_properties.pdf |