Classical trajectory study of adsorption and surface diffusion of Si on Si(100)
Adsorption and surfacediffusion of silicon on the Si(100) plane have been investigated by classical trajectory methods using a realistic potential‐energy surface. The calculated sticking probability for adsorption is 0.965 at 1500 K and is independent of temperature. The diffusion coefficient for Si...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics (AIP)
1984
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/35866/1/JCP1984.pdf |