Penentuan profil konsentrasi ion dopan pada lapisan semikonduktor silikon diimplantasi dengan ion fosfor tenaga 30 KeV dan 60 KeV

Penentuan profil konsentrasi ion dopan pada lapisan semikonduktor silikon diimplantasi dengan ion fosfor tenaga 30 KeV dan 60 KeV

Bibliographic Details
Main Authors:	, DWIJANANTI, Pratiwi, , Prof.Dr.Ir. Prayoto, M.Sc
Format:	Thesis
Published:	[Yogyakarta] : Universitas Gadjah Mada 1996
Subjects:	ETD

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