Studies of InAs and GaAs layers prepared by molecular beam epitaxy
This thesis describes a study of the growth and doping of single crystal thin films of GaAs and InAs by the technique of molecular beam epitaxy (MBE). One micron thick unintentionally doped films of InAs were deposited onto GaAs substrates at the relatively low growth temperature of 370°C and GaAs f...
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| Format: | Thesis |
| Language: | English |
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1980
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| Online Access: | https://repository.londonmet.ac.uk/2995/1/256299.pdf |