MBE growth and investigation of (001) GaAs surfaces using SIMS
An MBE system has been designed and constructed. After identification and elimination of various problems, high mobility, Si-doped , n-tYfe GaAs has been grown with electron concentration from ~ 5 x 10[to the power of]15 cm[to the power of]-3 (u 77 ~ 30,000 cm[squared]/Vs) to a solubility limit at ~...
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| Format: | Thesis |
| Language: | English |
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1985
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| Online Access: | https://repository.londonmet.ac.uk/3326/1/304022%20%281%29.pdf |