Silicon molecular beam epitaxy
This thesis reports on the techniques used in the growth and doping of Si-MBE layers prepared in a commercial molecular beam growth system and in the evaluation of their electrical and crystallographic properties. A number of technological problems associated with flux monitoring, the flaking of exc...
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| Format: | Thesis |
| Language: | English |
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1985
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| Online Access: | https://repository.londonmet.ac.uk/3359/1/352856.pdf |