Thermal conductivity and thermoelectric power of heavily doped n-type silicon
Experimental values are given of the thermal conductivity and thermoelectric power of n-type silicon doped with phosphorus, antimony or arsenic, containing 4*1019 to 6*1025 m-3 electrons at room temperature, covering the range 4-300 degrees K. A theoretical treatment, using the variational method, s...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Physics
1970
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| Subjects: | |
| Online Access: | https://repository.londonmet.ac.uk/5273/1/silicon.pdf |