Transferable reduced TB models for elemental Si and N and binary Si-N systems
<p>Silicon nitride is a bulk and a coating material exhibiting excellent mechanical properties. The understanding of the complex processes at the nanometre scale gained through experimental research will be enhanced by the existence of a computationally efficient and accurate model that is abl...
Үндсэн зохиолч: | Gehrmann, J |
---|---|
Бусад зохиолчид: | Kolmogorov, A |
Формат: | Дипломын ажил |
Хэл сонгох: | English |
Хэвлэсэн: |
2013
|
Нөхцлүүд: |
Ижил төстэй зүйлс
Ижил төстэй зүйлс
-
Electronic excitations in semiconductors and insulators using the Sternheimer-GW method
-н: Lambert, H, зэрэг
Хэвлэсэн: (2014) -
A theoretical investigation of gas source growth of the Si(001) surface
-н: Bowler, D, зэрэг
Хэвлэсэн: (1997) -
Effect of CaO/SiO2 molar ratio on the electrical and physical properties of basaltic glass materials
-н: G.A. Khater, зэрэг
Хэвлэсэн: (2019-02-01) -
The atomistic modelling approach to designing new metal-boride superconductors
-н: Shah, S
Хэвлэсэн: (2013) -
Carbon nanotube thin film electrodes and magneto-optical spectroscopy of perovskite single crystals and thin films
-н: Dollmann, M
Хэвлэсэн: (2019)