Transferable reduced TB models for elemental Si and N and binary Si-N systems
<p>Silicon nitride is a bulk and a coating material exhibiting excellent mechanical properties. The understanding of the complex processes at the nanometre scale gained through experimental research will be enhanced by the existence of a computationally efficient and accurate model that is abl...
Главный автор: | Gehrmann, J |
---|---|
Другие авторы: | Kolmogorov, A |
Формат: | Диссертация |
Язык: | English |
Опубликовано: |
2013
|
Предметы: |
Схожие документы
-
Electronic excitations in semiconductors and insulators using the Sternheimer-GW method
по: Lambert, H, и др.
Опубликовано: (2014) -
A theoretical investigation of gas source growth of the Si(001) surface
по: Bowler, D, и др.
Опубликовано: (1997) -
Effect of CaO/SiO2 molar ratio on the electrical and physical properties of basaltic glass materials
по: G.A. Khater, и др.
Опубликовано: (2019-02-01) -
The atomistic modelling approach to designing new metal-boride superconductors
по: Shah, S
Опубликовано: (2013) -
Carbon nanotube thin film electrodes and magneto-optical spectroscopy of perovskite single crystals and thin films
по: Dollmann, M
Опубликовано: (2019)