GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .1.
InAs/GaSb strained layer superlattices (SLSs) have been grown by metalorganic vapour phase epitaxy (MOVPE) at atmospheric pressure. Whilst long period SLSs have been successfully grown by this technique, the growth of short period structures is adversely affected by step-bunching. By growing the SLS...
| Main Authors: | , , , , , , , , , |
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| Format: | Conference item |
| Published: |
1994
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