Skip to content
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文(繁體)
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Language
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Tag
Find
Advanced
ELASTIC PROPERTIES OF GAAS DUR...
Cite this
Text this
Email this
Print
Export Record
Export to RefWorks
Export to EndNoteWeb
Export to EndNote
Permanent link
ELASTIC PROPERTIES OF GAAS DURING AMORPHIZATION BY ION-IMPLANTATION
Bibliographic Details
Main Authors:
Mutti, P
,
Sklar, Z
,
Briggs, G
,
Jeynes, C
Format:
Journal article
Published:
1995
Holdings
Description
Similar Items
Staff View
Similar Items
THE ELASTIC PROPERTIES OF ION-IMPLANTED SILICON
by: Burnett, P, et al.
Published: (1986)
ELASTIC CONSTANTS OF A STRESSED LAYER FROM SURFACE ACOUSTIC WAVE MEASUREMENTS
by: Sklar, Z, et al.
Published: (1995)
Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation
by: Hewak, Dan W., et al.
Published: (2014)
Thermally stimulated luminescence in ion-implanted GaAs
by: Gal, M, et al.
Published: (2002)
Ion-implanted GaAs for ultrafast saturable absorber applications
by: Lederer, M, et al.
Published: (2000)