Nanoscale memory cell based on a nanoelectromechanical switched capacitor.
The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory and carbon nanotube field-effect transistors, for ultra-large-scale integrated mem...
| Главные авторы: | , , , , , , , , |
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| Формат: | Journal article |
| Язык: | English |
| Опубликовано: |
2008
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