Annealing effects on the microstructure of Ge/Si(001) quantum dots
Ge/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 °C were investigated using energy-filtering transmission electron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase of Ge c...
| Główni autorzy: | , , , , , , |
|---|---|
| Format: | Journal article |
| Język: | English |
| Wydane: |
2001
|