Annealing effects on the microstructure of Ge/Si(001) quantum dots

Ge/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 °C were investigated using energy-filtering transmission electron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase of Ge c...

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Asıl Yazarlar: Liao, X, Zou, J, Cockayne, D, Wan, J, Jiang, Z, Jin, G, Wang, K
Materyal Türü: Journal article
Dil:English
Baskı/Yayın Bilgisi: 2001
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author Liao, X
Zou, J
Cockayne, D
Wan, J
Jiang, Z
Jin, G
Wang, K
author_facet Liao, X
Zou, J
Cockayne, D
Wan, J
Jiang, Z
Jin, G
Wang, K
author_sort Liao, X
collection OXFORD
description Ge/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 °C were investigated using energy-filtering transmission electron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase of Ge concentration within islands in upper layers. As a result of the increasing island size and Ge concentration within the islands, the island density in upper layers decreases. For samples annealed at 900 °C for 5 min, the aspect ratio of buried islands increases significantly, and the average Ge concentration within islands of different layers becomes uniform. © 2001 American Institute of Physics.
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spelling oxford-uuid:01b2b81d-82bd-410d-9a06-a72ae4c5a4b32022-03-26T08:36:29ZAnnealing effects on the microstructure of Ge/Si(001) quantum dotsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:01b2b81d-82bd-410d-9a06-a72ae4c5a4b3EnglishSymplectic Elements at Oxford2001Liao, XZou, JCockayne, DWan, JJiang, ZJin, GWang, KGe/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 °C were investigated using energy-filtering transmission electron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase of Ge concentration within islands in upper layers. As a result of the increasing island size and Ge concentration within the islands, the island density in upper layers decreases. For samples annealed at 900 °C for 5 min, the aspect ratio of buried islands increases significantly, and the average Ge concentration within islands of different layers becomes uniform. © 2001 American Institute of Physics.
spellingShingle Liao, X
Zou, J
Cockayne, D
Wan, J
Jiang, Z
Jin, G
Wang, K
Annealing effects on the microstructure of Ge/Si(001) quantum dots
title Annealing effects on the microstructure of Ge/Si(001) quantum dots
title_full Annealing effects on the microstructure of Ge/Si(001) quantum dots
title_fullStr Annealing effects on the microstructure of Ge/Si(001) quantum dots
title_full_unstemmed Annealing effects on the microstructure of Ge/Si(001) quantum dots
title_short Annealing effects on the microstructure of Ge/Si(001) quantum dots
title_sort annealing effects on the microstructure of ge si 001 quantum dots
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AT zouj annealingeffectsonthemicrostructureofgesi001quantumdots
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AT wanj annealingeffectsonthemicrostructureofgesi001quantumdots
AT jiangz annealingeffectsonthemicrostructureofgesi001quantumdots
AT jing annealingeffectsonthemicrostructureofgesi001quantumdots
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