Annealing effects on the microstructure of Ge/Si(001) quantum dots
Ge/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 °C were investigated using energy-filtering transmission electron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase of Ge c...
| 主要な著者: | , , , , , , |
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| フォーマット: | Journal article |
| 言語: | English |
| 出版事項: |
2001
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| _version_ | 1826256724223328256 |
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| author | Liao, X Zou, J Cockayne, D Wan, J Jiang, Z Jin, G Wang, K |
| author_facet | Liao, X Zou, J Cockayne, D Wan, J Jiang, Z Jin, G Wang, K |
| author_sort | Liao, X |
| collection | OXFORD |
| description | Ge/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 °C were investigated using energy-filtering transmission electron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase of Ge concentration within islands in upper layers. As a result of the increasing island size and Ge concentration within the islands, the island density in upper layers decreases. For samples annealed at 900 °C for 5 min, the aspect ratio of buried islands increases significantly, and the average Ge concentration within islands of different layers becomes uniform. © 2001 American Institute of Physics. |
| first_indexed | 2024-03-06T18:06:48Z |
| format | Journal article |
| id | oxford-uuid:01b2b81d-82bd-410d-9a06-a72ae4c5a4b3 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T18:06:48Z |
| publishDate | 2001 |
| record_format | dspace |
| spelling | oxford-uuid:01b2b81d-82bd-410d-9a06-a72ae4c5a4b32022-03-26T08:36:29ZAnnealing effects on the microstructure of Ge/Si(001) quantum dotsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:01b2b81d-82bd-410d-9a06-a72ae4c5a4b3EnglishSymplectic Elements at Oxford2001Liao, XZou, JCockayne, DWan, JJiang, ZJin, GWang, KGe/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 °C were investigated using energy-filtering transmission electron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase of Ge concentration within islands in upper layers. As a result of the increasing island size and Ge concentration within the islands, the island density in upper layers decreases. For samples annealed at 900 °C for 5 min, the aspect ratio of buried islands increases significantly, and the average Ge concentration within islands of different layers becomes uniform. © 2001 American Institute of Physics. |
| spellingShingle | Liao, X Zou, J Cockayne, D Wan, J Jiang, Z Jin, G Wang, K Annealing effects on the microstructure of Ge/Si(001) quantum dots |
| title | Annealing effects on the microstructure of Ge/Si(001) quantum dots |
| title_full | Annealing effects on the microstructure of Ge/Si(001) quantum dots |
| title_fullStr | Annealing effects on the microstructure of Ge/Si(001) quantum dots |
| title_full_unstemmed | Annealing effects on the microstructure of Ge/Si(001) quantum dots |
| title_short | Annealing effects on the microstructure of Ge/Si(001) quantum dots |
| title_sort | annealing effects on the microstructure of ge si 001 quantum dots |
| work_keys_str_mv | AT liaox annealingeffectsonthemicrostructureofgesi001quantumdots AT zouj annealingeffectsonthemicrostructureofgesi001quantumdots AT cockayned annealingeffectsonthemicrostructureofgesi001quantumdots AT wanj annealingeffectsonthemicrostructureofgesi001quantumdots AT jiangz annealingeffectsonthemicrostructureofgesi001quantumdots AT jing annealingeffectsonthemicrostructureofgesi001quantumdots AT wangk annealingeffectsonthemicrostructureofgesi001quantumdots |