Stable organic static random access memory from a roll-to-roll compatible vacuum evaporation process

An organic Static Random Access Memory (SRAM) based on p-type, six-transistor cells is demonstrated. The bottom-gate top-contact thin film transistors composing the memory were fabricated on flexible polyethylene naphthalate substrates. All metallization layers and the p-type semiconductor dinaphtho...

Полное описание

Библиографические подробности
Главные авторы: Assender, H, Avila-Nino, J, Patchett, E, Taylor, D, Yeates, S, Ding, Z, Morrison, J
Формат: Journal article
Опубликовано: Elsevier 2016