Stable organic static random access memory from a roll-to-roll compatible vacuum evaporation process
An organic Static Random Access Memory (SRAM) based on p-type, six-transistor cells is demonstrated. The bottom-gate top-contact thin film transistors composing the memory were fabricated on flexible polyethylene naphthalate substrates. All metallization layers and the p-type semiconductor dinaphtho...
| Principais autores: | , , , , , , |
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| Formato: | Journal article |
| Publicado em: |
Elsevier
2016
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