REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
The molecular surface chemistry underlying the selected-area growth of III-V semiconductors by chemical beam epitaxy is reviewed. Homoepitaxial growth of III-V semiconductors occurs efficiently because of high reactive sticking probabilities of the group III precursor, and efficient reaction pathway...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
1993
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