REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
The molecular surface chemistry underlying the selected-area growth of III-V semiconductors by chemical beam epitaxy is reviewed. Homoepitaxial growth of III-V semiconductors occurs efficiently because of high reactive sticking probabilities of the group III precursor, and efficient reaction pathway...
| Main Authors: | , , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
1993
|
| _version_ | 1797050895311044608 |
|---|---|
| author | Foord, J French, C Levoguer, C Davies, G Skevington, P |
| author_facet | Foord, J French, C Levoguer, C Davies, G Skevington, P |
| author_sort | Foord, J |
| collection | OXFORD |
| description | The molecular surface chemistry underlying the selected-area growth of III-V semiconductors by chemical beam epitaxy is reviewed. Homoepitaxial growth of III-V semiconductors occurs efficiently because of high reactive sticking probabilities of the group III precursor, and efficient reaction pathways resulting in the conversion of the initial chemisorbed species into elemental Ga on the semiconductor surface. In contrast it is shown that the sticking probability of triethyl gallium on the dielectric masks employed in selected-area epitaxy is vanishingly low, and any free Ga species produced become trapped in an inert oxidized form within the surface layers. |
| first_indexed | 2024-03-06T18:11:59Z |
| format | Journal article |
| id | oxford-uuid:0357cefa-13e9-4fad-8120-bff3e2a58917 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T18:11:59Z |
| publishDate | 1993 |
| record_format | dspace |
| spelling | oxford-uuid:0357cefa-13e9-4fad-8120-bff3e2a589172022-03-26T08:45:34ZREACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXYJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:0357cefa-13e9-4fad-8120-bff3e2a58917EnglishSymplectic Elements at Oxford1993Foord, JFrench, CLevoguer, CDavies, GSkevington, PThe molecular surface chemistry underlying the selected-area growth of III-V semiconductors by chemical beam epitaxy is reviewed. Homoepitaxial growth of III-V semiconductors occurs efficiently because of high reactive sticking probabilities of the group III precursor, and efficient reaction pathways resulting in the conversion of the initial chemisorbed species into elemental Ga on the semiconductor surface. In contrast it is shown that the sticking probability of triethyl gallium on the dielectric masks employed in selected-area epitaxy is vanishingly low, and any free Ga species produced become trapped in an inert oxidized form within the surface layers. |
| spellingShingle | Foord, J French, C Levoguer, C Davies, G Skevington, P REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY |
| title | REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY |
| title_full | REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY |
| title_fullStr | REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY |
| title_full_unstemmed | REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY |
| title_short | REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY |
| title_sort | reaction mechanisms governing the selected area growth of iii v semiconductors by chemical beam epitaxy |
| work_keys_str_mv | AT foordj reactionmechanismsgoverningtheselectedareagrowthofiiivsemiconductorsbychemicalbeamepitaxy AT frenchc reactionmechanismsgoverningtheselectedareagrowthofiiivsemiconductorsbychemicalbeamepitaxy AT levoguerc reactionmechanismsgoverningtheselectedareagrowthofiiivsemiconductorsbychemicalbeamepitaxy AT daviesg reactionmechanismsgoverningtheselectedareagrowthofiiivsemiconductorsbychemicalbeamepitaxy AT skevingtonp reactionmechanismsgoverningtheselectedareagrowthofiiivsemiconductorsbychemicalbeamepitaxy |