THE BRITTLE DUCTILE TRANSITION IN SILICON
Experimental and theoretical studies of the brittle-ductile transition (BDT) of precracked single crystals of silicon are discussed. For a given strain-rate the temperature Tc at which the BDT occurs varies by up to 250 K for similar materials but different test geometries. However, for a given mate...
| Egile Nagusiak: | , |
|---|---|
| Formatua: | Journal article |
| Argitaratua: |
1991
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