Saturated and near-diffraction-limited operation of an XUV laser at 23.6 nm

Saturated and near-diffraction-limited operation of an XUV laser at 23.6 nm

Amplification of spontaneous emission (ASE) at 23.6 nm has been studied in a Ge plasma heated by a 1 TW infrared laser pulse. The exponent of the axial gain reached 21 in a geometry with Fresnel number ≤ 1. Two plasma columns of combined length up to 36 mm were used with an extreme ultraviolet mirro...

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Bibliographic Details
Main Authors: Carillon, A, Chen, H, Dhez, P, Dwivedi, L, Jacoby, J, Jaegle, P, Jamelot, G, Zhang, J, Key, M, Kidd, A, Klisnick, A, Kodama, R, Krishnan, J, Lewis, C, Neely, D, Norreys, P, O'Neill, D, Pert, G, Ramsden, SA, Raucourt, J, Tallents, G, Uhomoibhi, J
Format: Journal article
Language:English
Published: 1992

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