Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization
The quality of the gate dielectric/semiconductor interface in thin-film transistors (TFTs) is known to determine the optimum operating characteristics attainable. As a result in recent years the development of methodologies that aim to improve the channel interface quality has become a priority. Her...
Main Authors: | , , , , , , |
---|---|
Format: | Journal article |
Language: | English |
Published: |
AIP Publishing
2018
|