Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization

Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization

The quality of the gate dielectric/semiconductor interface in thin-film transistors (TFTs) is known to determine the optimum operating characteristics attainable. As a result in recent years the development of methodologies that aim to improve the channel interface quality has become a priority. Her...

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Bibliographic Details
Main Authors:	Mottram, A, Pattanasattayavong, P, Isakov, I, Wyatt-Moon, G, Faber, H, Lin, Y, Anthopoulos, T
Format:	Journal article
Language:	English
Published:	AIP Publishing 2018

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