Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots
InGaAs/GaAs island formation during vapor phase epitaxy showed diverging behaviors when varying group V partial pressures (PP). Differences include changes in critical thicknesses for the onset of the Stranski-Krastanow (S-K) transformation, surface coverages, ratios between coherent and incoherent...
| Main Authors: | , , , , , |
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| Format: | Conference item |
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1999
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