Electronic structure of CuCrO2 thin films grown on Al2O3(001) by oxygen plasma assisted molecular beam epitaxy
Thin films of CuCrO2 have been grown on Al2O 3(001) substrates by oxygen plasma assisted molecular beam epitaxy. With a substrate temperature of 700°C or 750°C, the films showed an unanticipated (015) orientation but at a higher substrate temperature of 800°C the expected basal (001) orientation pre...
| Autors principals: | , , , |
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| Format: | Journal article |
| Idioma: | English |
| Publicat: |
2012
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