Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.
Achieving bulk-like charge carrier mobilities in semiconductor nanowires is a major challenge facing the development of nanowire-based electronic devices. Here we demonstrate that engineering the GaAs nanowire surface by overcoating with optimized AlGaAs shells is an effective means of obtaining exc...
| मुख्य लेखकों: | , , , , , , , , |
|---|---|
| स्वरूप: | Journal article |
| भाषा: | English |
| प्रकाशित: |
American Chemical Society
2014
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