Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.
Achieving bulk-like charge carrier mobilities in semiconductor nanowires is a major challenge facing the development of nanowire-based electronic devices. Here we demonstrate that engineering the GaAs nanowire surface by overcoating with optimized AlGaAs shells is an effective means of obtaining exc...
| المؤلفون الرئيسيون: | , , , , , , , , |
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| التنسيق: | Journal article |
| اللغة: | English |
| منشور في: |
American Chemical Society
2014
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