BACKSCATTERED ELECTRON COMPOSITIONAL ANALYSIS OF INTERFACES IN BULK SPECIMENS USING A DECONVOLUTION TECHNIQUE

An outline is given of a method for high resolution BSE analysis of chemical composition across interfaces in bulk semiconductor specimens. In this method the effects of electron beam diameter and beam spreading, which normally limit spatial resolution, are largely removed by a deconvolution techniq...

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Xehetasun bibliografikoak
Egile Nagusiak: Wilshaw, P, Konkol, A, Booker, G
Formatua: Journal article
Hizkuntza:English
Argitaratua: Publ by Inst of Physics Publ Ltd 1991