BACKSCATTERED ELECTRON COMPOSITIONAL ANALYSIS OF INTERFACES IN BULK SPECIMENS USING A DECONVOLUTION TECHNIQUE
An outline is given of a method for high resolution BSE analysis of chemical composition across interfaces in bulk semiconductor specimens. In this method the effects of electron beam diameter and beam spreading, which normally limit spatial resolution, are largely removed by a deconvolution techniq...
| Main Authors: | , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
Publ by Inst of Physics Publ Ltd
1991
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| Summary: | An outline is given of a method for high resolution BSE analysis of chemical composition across interfaces in bulk semiconductor specimens. In this method the effects of electron beam diameter and beam spreading, which normally limit spatial resolution, are largely removed by a deconvolution technique in which these effects are measured experimentally. Line profiles giving 10-90% interface widths as low as 19nm have been obtained at 30kV from an abrupt interface. |
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