A NEUTRON REFLECTIVITY STUDY OF HYDROGENATED SILICON SILICON-OXIDE THIN-FILMS
Four samples of poly-silicon/silicon oxide layers deposited on a silicon substrate have been investigated using neutron reflectivity involving the time-of-flight technique. Three of the samples were hydrogenated using a furnace at 500 degrees C, a plasma at 350 degrees C or both treatments. The thic...
| Main Authors: | , , , |
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| Format: | Journal article |
| Jezik: | English |
| Izdano: |
1989
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