A mechanism for "double half dislocation loops" nucleation in low misfit epitaxial GeXSi1-X on Si
A three-stage mechanism is discussed for the formation of "double half loops" observed by Perovic and Houghton (1992) in low misfit epitaxial layers of Ge-x Si1-x on Si. First, prismatic loops are nucleated in Ge precipitates at the interface to relieve their strain. Second, these loops ar...
| Egile nagusia: | |
|---|---|
| Formatua: | Conference item |
| Argitaratua: |
1997
|