The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers
Under certain conditions, interstitial oxygen atoms in Czochralski-grown silicon (Cz-Si) are known to hinder or completely stop dislocation motion. As a result, oxygen impurities can remarkably improve the mechanical strength of silicon wafers as they are transported and bound to dislocations. The a...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2003
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