Improved photoluminescence from electrochemically passivated GaSb
A new class of insulating and passivating layers on gallium antimonide has been prepared by means of an electrochemical process. In previous work we used this new process of fabrication of passivating and insulating layers for gating devices made from GaSb/InAs/GaSb nanostructures (Chen Y et al 1994...
| প্রধান লেখক: | , , , , , , |
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| বিন্যাস: | Journal article |
| প্রকাশিত: |
1997
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