Quantum dots and nanowires for optoelectronic device applications

Quantum dots and nanowires for optoelectronic device applications

InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2....

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Manylion Llyfryddiaeth
Prif Awduron:	Gao, Q, Kim, Y, Joyce, H, Lever, P, Mokkapati, S, Buda, M, Tan, H, Jagadish, C
Fformat:	Conference item
Cyhoeddwyd:	2006

Eitemau Tebyg

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Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires.
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