Quantum dots and nanowires for optoelectronic device applications
InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2....
Asıl Yazarlar: | Gao, Q, Kim, Y, Joyce, H, Lever, P, Mokkapati, S, Buda, M, Tan, H, Jagadish, C |
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Materyal Türü: | Conference item |
Baskı/Yayın Bilgisi: |
2006
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