The recombination mechanism of Mg-doped GaN nanorods grown by plasma-assisted molecular-beam epitaxy

Antzeko izenburuak

• Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy.
  nork: Park, Y, et al.
  Argitaratua: (2008)
• Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy
  nork: Na, J, et al.
  Argitaratua: (2005)
• Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy
  nork: Na, J, et al.
  Argitaratua: (2005)
• Effects of Surface Recombination on Exciton Dynamics in GaN Nanorods
  nork: Park, Y, et al.
  Argitaratua: (2009)
• Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy
  nork: Lingaparthi, R., et al.
  Argitaratua: (2022)