Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide

We demonstrate that metal oxides exhibit the same relationship between lattice strain and electronic band gap as nonpolar semiconductors. Epitaxial growth of ultrathin [111]-oriented single-crystal indium-oxide films on a mismatched Y-stabilized zirconia substrate reveals a net band-gap decrease, wh...

সম্পূর্ণ বিবরণ

গ্রন্থ-পঞ্জীর বিবরন
প্রধান লেখক: Walsh, A, Catlow, C, Zhang, K, Egdell, R
বিন্যাস: Journal article
ভাষা:English
প্রকাশিত: 2011