Probing the interface state densities near band edges from inductively coupled measurements of sheet resistance
In this work, we report a new approach to characterise interface state density (Dit) near the band edges. Interface defect states are known to trap charge carriers via SRH statistics. At dielectric-silicon interfaces charge in the dielectric layer is neutralised by a layer of mirroring carriers in b...
| Main Authors: | , , , , , |
|---|---|
| Format: | Conference item |
| Language: | English |
| Published: |
AIP Publishing
2023
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