Probing the interface state densities near band edges from inductively coupled measurements of sheet resistance

Probing the interface state densities near band edges from inductively coupled measurements of sheet resistance

In this work, we report a new approach to characterise interface state density (Dit) near the band edges. Interface defect states are known to trap charge carriers via SRH statistics. At dielectric-silicon interfaces charge in the dielectric layer is neutralised by a layer of mirroring carriers in b...

Szczegółowa specyfikacja

Opis bibliograficzny
Główni autorzy:	Yu, M, Wright, M, McNab, S, Al-Dhahir, I, Altermatt, PP, Bonilla, RS
Format:	Conference item
Język:	English
Wydane:	AIP Publishing 2023

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