OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE

OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE

We have measured the diffusion and trapping of photoexcited hot carriers in an InGaAs/InP heterostructure using an optical time-of-fight technique with picosecond time resolution. The ambipolar diffusivity is found to decrease by an order of magnitude between 4 K and room temperature, and the effici...

Полное описание

Библиографические подробности
Главные авторы:	Westland, D, Mihailovic, D, Ryan, J, Scott, M
Формат:	Journal article
Язык:	English
Опубликовано:	1987

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