Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition
Highly conducting (ρ = 3.9 × 10-4 Ωcm) and transparent (83%) polycrystalline Si-doped ZnO (SiZO) thin films have been deposited onto borosilicate glass substrates by pulsed laser deposition from (ZnO)1-x(SiO2)x (0 ≤ x ≤ 0.05) ceramic targets prepared using a sol-gel technique. Along with their struc...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Published: |
American Institute of Physics
2015
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